News Detail

samsung: DDR3 parts

6
Issuing time:2024-03-19 13:56Author:glochip.comSource:GlobalizeX.COMLink:https://www.glochip.com/news/
Density
Organization
Speed
Voltage
Temperature
Package
Product Status
K4B4G0846E-BCNB
4 Gb
512M x 8
2133 Mbps
1.5 V
0 ~ 85 °C
78 FBGA
Mass Production
K4B4G1646E-BCNB
4 Gb
512M x 8
2133 Mbps
1.5 V
0 ~ 85 °C
96 FBGA
Mass Production
K4B4G0846E-BCK0
4 Gb
512M x 8
1600 Mbps
1.5 V
0 ~ 85 °C
78 FBGA
Mass Production
K4B4G0846E-BCMA
4 Gb
512M x 8
1866 Mbps
1.5 V
0 ~ 85 °C
78 FBGA
Mass Production
K4B4G0846E-BMK0
4 Gb
512M x 8
1600 Mbps
1.35 V
-40 ~ 95 °C
78 FBGA
Mass Production
K4B4G0846E-BMMA
4 Gb
512M x 8
1600 Mbps
1.35 V
-40 ~ 95 °C
78 FBGA
Mass Production
K4B4G0846E-BYK0
4 Gb
512M x 8
1600 Mbps
1.35 V
0 ~ 85 °C
78 FBGA
Mass Production
K4B4G0846E-BYMA
4 Gb
512M x 8
1866 Mbps
1.35 V
0 ~ 85 °C
78 FBGA
Mass Production
K4B4G1646E-BCK0
4 Gb
512M x 8
1600 Mbps
1.5 V
0 ~ 85 °C
96 FBGA
Mass Production
K4B4G1646E-BCMA
4 Gb
512M x 8
1866 Mbps
1.5 V
0 ~ 85 °C
96 FBGA
Mass Production
K4B4G1646E-BMK0
4 Gb
256M x 16
1600 Mbps
1.35 V
-40 ~ 95 °C
96 FBGA
Mass Production
K4B4G1646E-BMMA
4 Gb
256M x 16
1600 Mbps
1.35 V
-40 ~ 95 °C
96 FBGA
Mass Production
K4B4G1646E-BYK0
4 Gb
512M x 8
1600 Mbps
1.35 V
0 ~ 85 °C
96 FBGA
Mass Production
K4B4G1646E-BYMA
4 Gb
512M x 8
1866 Mbps
1.35 V
0 ~ 85 °C
96 FBGA
Mass Production


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